Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers | |
Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chak Wah; Lau, Kei May | |
刊名 | IEEE ELECTRON DEVICE LETTERS
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2016 | |
卷号 | 37期号:[db:dc_citation_issue]页码:636-639 |
关键词 | GaN-on-Si p-i-n diodes Si removal vertical devices power electronics rectifiers |
ISSN号 | 0741-3106 |
DOI | [db:dc_identifier_doi] |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3229982 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Zou, Xinbo,Zhang, Xu,Lu, Xing,et al. Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers[J]. IEEE ELECTRON DEVICE LETTERS,2016,37([db:dc_citation_issue]):636-639. |
APA | Zou, Xinbo,Zhang, Xu,Lu, Xing,Tang, Chak Wah,&Lau, Kei May.(2016).Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers.IEEE ELECTRON DEVICE LETTERS,37([db:dc_citation_issue]),636-639. |
MLA | Zou, Xinbo,et al."Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers".IEEE ELECTRON DEVICE LETTERS 37.[db:dc_citation_issue](2016):636-639. |
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