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	Epitaxial yttrium iron garnet film for fabrication of high frequency on-chip inductors
	Wang, Gang; Liu, Houfang; Wu, Hao; Li, Xiaoning; Qiu, Haochuan; Yang, Yi; Qu, Bingjun; Ren, Tian-Ling; Han, Xiufeng; Zhang, Ruyi
刊名	APPLIED PHYSICS LETTERS
	2016
卷号	109期号:[db:dc_citation_issue]
ISSN号	0003-6951
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3228536
专题	西安交通大学
推荐引用方式 GB/T 7714	Wang, Gang,Liu, Houfang,Wu, Hao,et al. Epitaxial yttrium iron garnet film for fabrication of high frequency on-chip inductors[J]. APPLIED PHYSICS LETTERS,2016,109([db:dc_citation_issue]).
APA	Wang, Gang.,Liu, Houfang.,Wu, Hao.,Li, Xiaoning.,Qiu, Haochuan.,...&Wang, Hong.(2016).Epitaxial yttrium iron garnet film for fabrication of high frequency on-chip inductors.APPLIED PHYSICS LETTERS,109([db:dc_citation_issue]).
MLA	Wang, Gang,et al."Epitaxial yttrium iron garnet film for fabrication of high frequency on-chip inductors".APPLIED PHYSICS LETTERS 109.[db:dc_citation_issue](2016).

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