Nonparabolic multivalley balance-equation approach to high-field electron transport and impact ionization in ZnS: Comparison with full-band Monte Carlo simulations

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	Nonparabolic multivalley balance-equation approach to high-field electron transport and impact ionization in ZnS: Comparison with full-band Monte Carlo simulations
	Cao, JC
刊名	PHYSICAL REVIEW B
	2004
卷号	69 期号:16 页码:165203-165203
关键词	MULTIPLICATION SEMICONDUCTORS DEVICES
ISSN号	1098-0121
通讯作者	Cao, JC, Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2011-12-02
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/31612]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Cao, JC. Nonparabolic multivalley balance-equation approach to high-field electron transport and impact ionization in ZnS: Comparison with full-band Monte Carlo simulations[J]. PHYSICAL REVIEW B,2004,69(16):165203-165203.
APA	Cao, JC.(2004).Nonparabolic multivalley balance-equation approach to high-field electron transport and impact ionization in ZnS: Comparison with full-band Monte Carlo simulations.PHYSICAL REVIEW B,69(16),165203-165203.
MLA	Cao, JC."Nonparabolic multivalley balance-equation approach to high-field electron transport and impact ionization in ZnS: Comparison with full-band Monte Carlo simulations".PHYSICAL REVIEW B 69.16(2004):165203-165203.