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	A kinetic Monte Carlo model for the growth and etching of graphene during chemical vapor deposition
	Shuai Chen; Junfeng Gao; Srinivasan, Bharathi M.; Zhang, Gang; Sorkin, Viacheslav; Hariharaputran, Ramanarayan; Zhang, Yong-Wei
刊名	Carbon
	2019
卷号	146页码:399-405
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3217684
专题	大连理工大学
作者单位	1.Institute of High Performance Computing, Singapore 2.Institute of High Performance Computing 3.ASTAR, Inst High Performance, Singapore 138632, Singapore 4.Institute of High Performance Computing, ASTAR, Singapore 5.Inst High Performance, Singapore 138632, Singapore
推荐引用方式 GB/T 7714	Shuai Chen,Junfeng Gao,Srinivasan, Bharathi M.,et al. A kinetic Monte Carlo model for the growth and etching of graphene during chemical vapor deposition[J]. Carbon,2019,146:399-405.
APA	Shuai Chen.,Junfeng Gao.,Srinivasan, Bharathi M..,Zhang, Gang.,Sorkin, Viacheslav.,...&Zhang, Yong-Wei.(2019).A kinetic Monte Carlo model for the growth and etching of graphene during chemical vapor deposition.Carbon,146,399-405.
MLA	Shuai Chen,et al."A kinetic Monte Carlo model for the growth and etching of graphene during chemical vapor deposition".Carbon 146(2019):399-405.

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