Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs

	Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs
	Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li
刊名	Superlattices and Microstructures
	2018
卷号	114 页码:32-36
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29332]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li. Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs[J]. Superlattices and Microstructures,2018,114:32-36.
APA	Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li.(2018).Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs.Superlattices and Microstructures,114,32-36.
MLA	Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li."Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs".Superlattices and Microstructures 114(2018):32-36.