Strong electron-polarized atom chain in amorphous phase-change memory Ge[sbnd]Sb[sbnd]Te alloy | |
Chen, Nian-Ke[1]; Li, Xian-Bin[1,3]; Wang, Xue-Peng[1]; Tian, Wei Quan[2]; Zhang, Shengbai[1,3]; Sun, Hong-Bo[1] | |
2018 | |
卷号 | 143页码:102-106 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3193492 |
专题 | 重庆大学 |
推荐引用方式 GB/T 7714 | Chen, Nian-Ke[1],Li, Xian-Bin[1,3],Wang, Xue-Peng[1],et al. Strong electron-polarized atom chain in amorphous phase-change memory Ge[sbnd]Sb[sbnd]Te alloy[J],2018,143:102-106. |
APA | Chen, Nian-Ke[1],Li, Xian-Bin[1,3],Wang, Xue-Peng[1],Tian, Wei Quan[2],Zhang, Shengbai[1,3],&Sun, Hong-Bo[1].(2018).Strong electron-polarized atom chain in amorphous phase-change memory Ge[sbnd]Sb[sbnd]Te alloy.,143,102-106. |
MLA | Chen, Nian-Ke[1],et al."Strong electron-polarized atom chain in amorphous phase-change memory Ge[sbnd]Sb[sbnd]Te alloy".143(2018):102-106. |
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