A Novel Fast Collector Trench Insulated Gate Bipolar Transistor | |
Jiang, Mengxuan[1]; Shuai, Zhikang[2]; Shen, Zheng[2]; Wang, Jun[2]; Liu, Daoguang[3] | |
2017 | |
卷号 | 32页码:53-58 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3047398 |
专题 | 重庆大学 |
推荐引用方式 GB/T 7714 | Jiang, Mengxuan[1],Shuai, Zhikang[2],Shen, Zheng[2],et al. A Novel Fast Collector Trench Insulated Gate Bipolar Transistor[J],2017,32:53-58. |
APA | Jiang, Mengxuan[1],Shuai, Zhikang[2],Shen, Zheng[2],Wang, Jun[2],&Liu, Daoguang[3].(2017).A Novel Fast Collector Trench Insulated Gate Bipolar Transistor.,32,53-58. |
MLA | Jiang, Mengxuan[1],et al."A Novel Fast Collector Trench Insulated Gate Bipolar Transistor".32(2017):53-58. |
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