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	Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate
	Cheng, Kun[1]; Hu, Shengdong[1,2]; Jiang, Yuyu[1]; Yuan, Qi[1]; Yang, Dong[1]; Huang, Ye[1]; Lei, Jianmei[2]; Lin, Zhi[1]; Zhou, Xichuan[1]; Tang, Fang[1]
	2017
卷号	16页码:83-89
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2978336
专题	重庆大学
推荐引用方式 GB/T 7714	Cheng, Kun[1],Hu, Shengdong[1,2],Jiang, Yuyu[1],et al. Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate[J],2017,16:83-89.
APA	Cheng, Kun[1].,Hu, Shengdong[1,2].,Jiang, Yuyu[1].,Yuan, Qi[1].,Yang, Dong[1].,...&Tang, Fang[1].(2017).Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate.,16,83-89.
MLA	Cheng, Kun[1],et al."Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate".16(2017):83-89.

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