| Double-gate-all-around tunnel field-effect transistor | |
| Zhang, Wen-Hao; Li, Zun-Chao; Guan, Yun-He; Zhang, Ye-Fei | |
| 刊名 | CHINESE PHYSICS B
 |
| 2017 | |
| 卷号 | 26 |
| 关键词 | tunnel field effect transistor (TFET) drain induced barrier thinning (DIBT) gate-all-around (GAA) |
| ISSN号 | 1674-1056 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2948881 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Zhang, Wen-Hao,Li, Zun-Chao,Guan, Yun-He,et al. Double-gate-all-around tunnel field-effect transistor[J]. CHINESE PHYSICS B,2017,26. |
| APA | Zhang, Wen-Hao,Li, Zun-Chao,Guan, Yun-He,&Zhang, Ye-Fei.(2017).Double-gate-all-around tunnel field-effect transistor.CHINESE PHYSICS B,26. |
| MLA | Zhang, Wen-Hao,et al."Double-gate-all-around tunnel field-effect transistor".CHINESE PHYSICS B 26(2017). |
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