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	The Influence of the multilayer ZnO-HfOx structure on the characteristics of a lightemitting device
	Liu, Lingguang; Zhang, Xiaoning; Yu, Bojiang; Lin, Yuanyuan; Zhang, He
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2017
卷号	32
关键词	dielectric breakdown ZnO-HfOx light emitting device broad band light
ISSN号	0268-1242
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2946667
专题	西安交通大学
推荐引用方式 GB/T 7714	Liu, Lingguang,Zhang, Xiaoning,Yu, Bojiang,et al. The Influence of the multilayer ZnO-HfOx structure on the characteristics of a lightemitting device[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2017,32.
APA	Liu, Lingguang,Zhang, Xiaoning,Yu, Bojiang,Lin, Yuanyuan,&Zhang, He.(2017).The Influence of the multilayer ZnO-HfOx structure on the characteristics of a lightemitting device.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,32.
MLA	Liu, Lingguang,et al."The Influence of the multilayer ZnO-HfOx structure on the characteristics of a lightemitting device".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32(2017).

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