QQ客服 官方微博 反馈留言

	Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO Schottky diodes on Pt–Si substrates
	Yu, S.a; Zhang, C.a; Yang, P.a; Wu, M.b; Sun, Y.c; Li, L.a
刊名	Journal of Materials Science: Materials in Electronics
	2019
卷号	Vol.30 No.19页码:18287-18295
ISSN号	0957-4522;1573-482X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2929081
专题	天津大学
作者单位	1.aSchool of Microelectronics and Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, 300072, China 2.bSchool of Electronic Engineering and Intelligentization, Dongguan University of Technology, Dongguan, Guangdong 523808, China 3.cDepartment of Mechanics and Tianjin Key Laboratory of Nonlinear Dynamics and Control, Tianjin University, Tianjin, 30050, China
推荐引用方式 GB/T 7714	Yu, S.a,Zhang, C.a,Yang, P.a,et al. Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO Schottky diodes on Pt–Si substrates[J]. Journal of Materials Science: Materials in Electronics,2019,Vol.30 No.19:18287-18295.
APA	Yu, S.a,Zhang, C.a,Yang, P.a,Wu, M.b,Sun, Y.c,&Li, L.a.(2019).Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO Schottky diodes on Pt–Si substrates.Journal of Materials Science: Materials in Electronics,Vol.30 No.19,18287-18295.
MLA	Yu, S.a,et al."Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO Schottky diodes on Pt–Si substrates".Journal of Materials Science: Materials in Electronics Vol.30 No.19(2019):18287-18295.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。