Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs | |
Cui, Miao; Cai, Yutao; Lam, Sang; Liu, Wen; Zhao, Chun; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R. | |
2018 | |
关键词 | AlGaN/GaN MIS-HEMTs Frequency dependence Frequency independent High-voltage switching Metal-insulator-semiconductors MIS-HEMT Threshold voltage shifts Voltage hysteresis |
会议录 | 2018 IEEE International Conference on Electron Devices and Solid State Circuits, EDSSC 2018 |
URL标识 | 查看原文 |
ISSN号 | 9781538662342 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2921475 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Cui, Miao,Cai, Yutao,Lam, Sang,et al. Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs[C]. 见:. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论