The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot

CORC > 上海微系统与信息技术研究所 > 无线、宽带、通讯技术 > 期刊论文

	The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot
	Wu, HT ; Wang, HL ; Jiang, LM ; Gong, Q ; Feng, SL
刊名	PHYSICA B-CONDENSED MATTER
	2009-01-01
卷号	404 期号:1 页码:122-126
关键词	WELL WIRES DONOR IMPURITY STATES NANOSTRUCTURES WURTZITE
ISSN号	0921-4526
通讯作者	Wang, HL, Qufu Normal Univ, Coll Phys & Engn, Qufu 273165, Peoples R China
学科主题	Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2011-11-03
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/11191]
专题	上海微系统与信息技术研究所_无线、宽带、通讯技术_期刊论文
推荐引用方式 GB/T 7714	Wu, HT,Wang, HL,Jiang, LM,et al. The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot[J]. PHYSICA B-CONDENSED MATTER,2009,404(1):122-126.
APA	Wu, HT,Wang, HL,Jiang, LM,Gong, Q,&Feng, SL.(2009).The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot.PHYSICA B-CONDENSED MATTER,404(1),122-126.
MLA	Wu, HT,et al."The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot".PHYSICA B-CONDENSED MATTER 404.1(2009):122-126.