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	Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect.
	Dai, Y.a,b; Wang, X.a; Peng, W.a; Zou, H.a; Yu, R.a; Ding, Y.a; Wu, C.a; Wang, Z.L.a,c
刊名	ACS Nano
	2017
卷号	Vol.11 No.7页码:7118-7125
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2893238
专题	天津大学
作者单位	1.aSchool of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, United States 2.bKey Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China 3.cBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
推荐引用方式 GB/T 7714	Dai, Y.a,b,Wang, X.a,Peng, W.a,et al. Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect.[J]. ACS Nano,2017,Vol.11 No.7:7118-7125.
APA	Dai, Y.a,b.,Wang, X.a.,Peng, W.a.,Zou, H.a.,Yu, R.a.,...&Wang, Z.L.a,c.(2017).Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect..ACS Nano,Vol.11 No.7,7118-7125.
MLA	Dai, Y.a,b,et al."Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect.".ACS Nano Vol.11 No.7(2017):7118-7125.

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