Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance | |
Wan, Da; Liu, Xingqiang; Abliz, Ablat; Liu, Chuansheng; Yang, Yanbing; Wu, Wei; Li, Guoli; Li, Jinchai; Chen, Huipeng; Guo, Tailiang | |
刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES |
2018 | |
卷号 | 65页码:1018-1022 |
关键词 | tungsten (W)-doping pulsed current-voltage (I-V) solution processed Indium zinc oxide (IZO) thin-film transistors (TFTs) |
ISSN号 | 0018-9383 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2891274 |
专题 | 福州大学 |
推荐引用方式 GB/T 7714 | Wan, Da,Liu, Xingqiang,Abliz, Ablat,et al. Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65:1018-1022. |
APA | Wan, Da.,Liu, Xingqiang.,Abliz, Ablat.,Liu, Chuansheng.,Yang, Yanbing.,...&Liao, Lei.(2018).Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance.IEEE TRANSACTIONS ON ELECTRON DEVICES,65,1018-1022. |
MLA | Wan, Da,et al."Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance".IEEE TRANSACTIONS ON ELECTRON DEVICES 65(2018):1018-1022. |
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