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	Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device
	Chen, Y. R.; Li, Z. M.; Zhang, Z. W.; Hu, L. Q.; Jiang, H.; Miao, G. Q.; Song, H.
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2018
卷号	740页码:816-822
关键词	Annealing effect Resistive switching Nonvolatile memory Metal-insulator-semiconductor Data storage materials
ISSN号	0925-8388
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2888842
专题	福州大学
推荐引用方式 GB/T 7714	Chen, Y. R.,Li, Z. M.,Zhang, Z. W.,et al. Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,740:816-822.
APA	Chen, Y. R..,Li, Z. M..,Zhang, Z. W..,Hu, L. Q..,Jiang, H..,...&Song, H..(2018).Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device.JOURNAL OF ALLOYS AND COMPOUNDS,740,816-822.
MLA	Chen, Y. R.,et al."Annealing effect on the bipolar resistive switching characteristics of a Ti/Si3N4/n-GaN MIS device".JOURNAL OF ALLOYS AND COMPOUNDS 740(2018):816-822.

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