半导体器件制造方法 | |
秦长亮; 马小龙; 王桂磊; 朱慧珑; 殷华湘 | |
2016-07-05 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9385212 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A method for manufacturing a semiconductor device is provided. The method includes forming, on a substrate, a plurality of fins extending along a first direction; forming, on the fins, a dummy gate stack extending along a second direction; forming a gate spacer on opposite sides of the dummy gate stack in the first direction; epitaxially growing raised source/drain regions on the top of the fins on opposite sides of the gate spacer in the first direction; performing lightly-doping ion implantation through the raised source/drain regions with the gate spacer as a mask, to form source/drain extension regions in the fins on opposite sides of the gate spacer in the first direction; removing the dummy gate stack to form a gate trench; and forming a gate stack in the gate trench. |
公开日期 | 2016-03-10 |
申请日期 | 2015-05-29 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/16593] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 秦长亮,马小龙,王桂磊,等. 半导体器件制造方法. US9385212. 2016-07-05. |
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