Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-<i>k</i>/metal gate nMOSFETs with gate-last process

	Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process
	Qi LW(祁路伟); Wang WW(王文武)
刊名	Chinese Physics B
	2015-12-05
公开日期	2016-05-31
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/15079]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Qi LW,Wang WW. Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process[J]. Chinese Physics B,2015.
APA	Qi LW,&Wang WW.(2015).Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process.Chinese Physics B.
MLA	Qi LW,et al."Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process".Chinese Physics B (2015).