半导体器件的制造方法 | |
赵超![]() ![]() ![]() ![]() | |
2014-02-04 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US8642433 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A method for manufacturing a semiconductor device is disclosed, comprising: providing a substrate, a gate region on the substrate and a semiconductor region at both sides of the gate region; forming sacrificial spacers, which cover a portion of the semiconductor region, on sidewalls of the gate region; forming a metal layer on a portion of the semiconductor region outside the sacrificial spacers and on the gate region; removing the sacrificial spacers; performing annealing so that the metal layer reacts with the semiconductor region to form a metal-semiconductor compound layer on the semiconductor region; and removing unreacted metal layer. By separating the metal layer from the channel and the gate region of the device with the thickness of the sacrificial spacers, the effect of metal layer diffusion on the channel and the gate region is reduced and performance of the device is improved. |
公开日期 | 2013-02-21 |
申请日期 | 2011-12-05 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://10.10.10.126/handle/311049/13182] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 赵超,钟汇才,罗军,等. 半导体器件的制造方法. US8642433. 2014-02-04. |
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