Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film

	Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film
	Chen DP(陈大鹏); Wang WW(王文武); Xiong YH(熊玉华)
刊名	APPLIED PHYSICS LETTERS
	2011-02-25
英文摘要	Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film
公开日期	2012-11-14
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/9121]
专题	微电子研究所_集成电路先导工艺研发中心
通讯作者	Xiong YH(熊玉华)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Chen DP,Wang WW,Xiong YH. Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film[J]. APPLIED PHYSICS LETTERS,2011.
APA	Chen DP,Wang WW,&Xiong YH.(2011).Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film.APPLIED PHYSICS LETTERS.
MLA	Chen DP,et al."Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high k film".APPLIED PHYSICS LETTERS (2011).