Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

	Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
	Shi JY(史敬元); Fan J(樊捷); Kang XW(康玄武); Wang XH(王鑫华); Huang S(黄森); Liu XY(刘新宇); Zheng YK(郑英奎); Wei K(魏珂)
刊名	IEEE Transactions on Electron Devices
	2018
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18976]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Shi JY,Fan J,Kang XW,et al. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices[J]. IEEE Transactions on Electron Devices,2018.
APA	Shi JY.,Fan J.,Kang XW.,Wang XH.,Huang S.,...&Wei K.(2018).Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.IEEE Transactions on Electron Devices.
MLA	Shi JY,et al."Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices".IEEE Transactions on Electron Devices (2018).