| A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode | |
Zhou JT(周静涛) ; Jin Z(金智); Guo D(郭栋); Liu XY(刘晓宇)
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| 刊名 | Chinese Physics Letters
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| 2017-07-07 | |
| 文献子类 | 期刊论文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18018]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Zhou JT,Jin Z,Guo D,et al. A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode[J]. Chinese Physics Letters,2017. |
| APA | Zhou JT,Jin Z,Guo D,&Liu XY.(2017).A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode.Chinese Physics Letters. |
| MLA | Zhou JT,et al."A High-Sensitivity Terahertz Detector Based on a Low-Barrier Schottky Diode".Chinese Physics Letters (2017). |
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