Positive Bias Temperature Instability Degradation of Buried InGaAs ChannelnMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric

	Positive Bias Temperature Instability Degradation of Buried InGaAs ChannelnMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric
	Liu HG(刘洪刚); Wang SK(王盛凯); Ma L(马磊); Chang HD(常虎东); Sun B(孙兵); Su YY(苏玉玉); Jin Z(金智); Liu XY(刘新宇)
刊名	Chin. Phys. Lett.
	2017-05-01
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/17997]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Liu HG,Wang SK,Ma L,et al. Positive Bias Temperature Instability Degradation of Buried InGaAs ChannelnMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric[J]. Chin. Phys. Lett.,2017.
APA	Liu HG.,Wang SK.,Ma L.,Chang HD.,Sun B.,...&Liu XY.(2017).Positive Bias Temperature Instability Degradation of Buried InGaAs ChannelnMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric.Chin. Phys. Lett..
MLA	Liu HG,et al."Positive Bias Temperature Instability Degradation of Buried InGaAs ChannelnMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric".Chin. Phys. Lett. (2017).