一种对磁多畴态进行调控的方法
毕冲; 龙世兵; 刘明
2017-10-03
著作权人中国科学院微电子研究所
专利号US9779836
国家美国
文献子类发明专利
英文摘要

The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an additional external magnetic field having a magnetic field strength of 0 to 4.times.105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and keeps stable when the current is removed. Such a method may be used for magnetic memory or spin-logic device to implement a nonvolatile multi-valued storage, multi-bits logic operation, or neuromorphic computing.

公开日期2015-09-17
申请日期2014-03-12
语种中文
内容类型专利
源URL[http://159.226.55.106/handle/172511/18224]  
专题微电子研究所_微电子器件与集成技术重点实验室
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
毕冲,龙世兵,刘明. 一种对磁多畴态进行调控的方法. US9779836. 2017-10-03.
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