Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

	Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM
	Cao RR(曹荣荣); Liu M(刘明); Long SB(龙世兵); Lv HB(吕杭炳); Wang Y(王艳); Wu QT(吴全潭); Wu FC(伍法才); Zhang XM(张续猛); Wang W(王伟); Zhao XL(赵晓龙)
刊名	IEEE ELECTRON DEVICE LETTERS
	2017-09-25
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18164]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Cao RR,Liu M,Long SB,et al. Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM[J]. IEEE ELECTRON DEVICE LETTERS,2017.
APA	Cao RR.,Liu M.,Long SB.,Lv HB.,Wang Y.,...&Liu S.(2017).Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM.IEEE ELECTRON DEVICE LETTERS.
MLA	Cao RR,et al."Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM".IEEE ELECTRON DEVICE LETTERS (2017).