Thermoelectric Seebeck effect in oxide-based resistive switching memory

	Thermoelectric Seebeck effect in oxide-based resistive switching memory
	Liu Q(刘琦); Long SB(龙世兵); Wang M(王明); Li L(李泠); Lv HB(吕杭炳); Lu ND(卢年端); Sun PX(孙鹏霄); Liu M(刘明)
刊名	Nature Communications
	2014-08-20
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12500]
专题	微电子研究所_微电子器件与集成技术重点实验室
通讯作者	Liu M(刘明)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Liu Q,Long SB,Wang M,et al. Thermoelectric Seebeck effect in oxide-based resistive switching memory[J]. Nature Communications,2014.
APA	Liu Q.,Long SB.,Wang M.,Li L.,Lv HB.,...&Liu M.(2014).Thermoelectric Seebeck effect in oxide-based resistive switching memory.Nature Communications.
MLA	Liu Q,et al."Thermoelectric Seebeck effect in oxide-based resistive switching memory".Nature Communications (2014).