Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-situ Electron Holography and Kelvin Probe Force Microscopy Technology

	Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-situ Electron Holography and Kelvin Probe Force Microscopy Technology
	Liu M(刘明); Han YL(韩宇龙); Huo ZL(霍宗亮); Li XK(李新开)
	2013-05-29
内容类型	会议论文
源URL	[http://10.10.10.126/handle/311049/11844]
专题	微电子研究所_微电子器件与集成技术重点实验室
通讯作者	Liu M(刘明); Huo ZL(霍宗亮)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Liu M,Han YL,Huo ZL,et al. Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-situ Electron Holography and Kelvin Probe Force Microscopy Technology[C]. 见:.