Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation

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	Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation
	Li DL(李多力); Zhu HP(朱慧平); Chen X(陈曦); Zheng ZS(郑中山); Li B(李博); Gao JT(高见头); Luo JJ(罗家俊); Han ZS(韩郑生)
	2018-10-31
内容类型	会议论文
源URL	[http://159.226.55.107/handle/172511/19116]
专题	微电子研究所_硅器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Li DL,Zhu HP,Chen X,et al. Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation[C]. 见:.