Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer

doi:10.1016/j.nimb.2017.04.056

	Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer
	Song, Y.1 ; Zhang, L. Q.1,2; Zhang, C. H.1; Xu, C. L.1,2; Li, Jj.1,2; Yang, Y. T.1; Ma, Y. Z.1; Li, J. Y.1; Liu, H. P.1; Ding, Z. N.1
	2017-09
关键词	GaN Highly-charged bismuth ion irradiation AFM XPS Raman scattering spectrum PL
卷号	406
DOI	10.1016/j.nimb.2017.04.056
页码	571-577
英文摘要	The microstructure and optoelectric properties of GaN epilayer irradiated by highly-charged Bi-209(33+) to different fluences are investigated by means of atomic force microscopy, X-ray photoelectron spectroscopy, Raman scattering spectroscopy and photoluminescence spectroscopy. After Bi33+ irradiation, AFM observation shows the irradiated GaN surface is a swelling and swelling rate nonlinearly increases with increasing ions fluence. XPS analysis reveals the relative content of Ga-N bond reduces and Ga-O, Ga-Ga bonds have been produced as the fluence increases. Raman scattering spectra display the thickness of surface depletion layer increases, free carrier concentration and its mobility decrease generally with an increase in ions fluence. Furthermore, the length of Ga-N bond shortens and lattices experience compressive stress with increasing ions fluence are observed from Raman spectra. Room temperature PL spectra reflect the intensity of yellow luminescence (YL) emission increases and its peak has a blueshift after 1.061 x 10(12) Bi33+/cm(2) irradiation. Moreover, as the temperature rises, the thermal quenching of YL occurs and its peak position first exhibits a blueshift and then a redshift. Results may be served as a useful reference for HCI to be used in semiconductor fields. (C) 2017 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
资助项目	National Basic Research Program of China[2010CB832904]
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000407659500033
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58427]
专题	近代物理研究所_材料研究中心
通讯作者	Zhang, C. H.
作者单位	1.Chinese Acad Sci, Inst Modern Phys, 509 Nan Chang Rd, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Song, Y.,Zhang, L. Q.,Zhang, C. H.,et al. Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer[C]. 见:.