Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

doi:10.1016/j.nimb.2005.11.134

	Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation
	Duan, JL; Song, Y; Zhang, CH; Wang, ZG; Sun, YM; Zhao, ZM
	2006-04
关键词	ion implantation heavy ion irradiation Al2O3 PL spectra
卷号	245
期号	1
DOI	10.1016/j.nimb.2005.11.134
页码	210-213
英文摘要	In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed. (c) 2005 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000236288500044
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57962]
专题	近代物理研究所_材料研究中心
通讯作者	Song, Y
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Duan, JL,Song, Y,Zhang, CH,et al. Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation[C]. 见:.