Modifications of SiC under high fluence Kr-ion irradiation at different temperatures

doi:10.1016/j.nimb.2012.11.089

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Modifications of SiC under high fluence Kr-ion irradiation at different temperatures
	Yao, Cunfeng2 ; Shen, Tielong 2; Wang, Zhiguang2 ; He, Chaohui 1; Xi, Jianqi 1; Guo, Daxi 1; Yang, Tao 1; Zang, Hang 1; Zhang, Peng 1; Pang, Lilong 2
	2013-07-15
关键词	SiC Heavy-ion irradiation Raman Mechanical property High fluence
卷号	307
DOI	10.1016/j.nimb.2012.11.089
页码	558-561
英文摘要	4 MeV Kr-ions were irradiated into 6H-SiC single crystals with fluences from 1.0 x 10(16) to 5.0 x 10(16) cm(-2) at room temperature, 300 degrees C and 500 degrees C, respectively (5.0 x 10(16) cm(-2) at 550 degrees C). The irradiation-induced modifications were measured by Atomic Force Microscope (AFM), Raman Spectrometer and Nano-indentation measurements. It was observed that the surface of RT-irradiated samples became rough as a result of crystallizing to amorphous state. The result of Raman spectra indicates that different migration behaviors of Si and C interstitials at different temperatures could have an effect on the stoichiometry of irradiated samples. It was also observed that the hardness of irradiated samples is higher than that of un-irradiated ones at high temperatures, with increase at low fluence and then decrease at high fluence. Finally, the effects of irradiation temperature and ion fluence are discussed. (C) 2013 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000321722200123
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57516]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	He, Chaohui
作者单位	1.Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Yao, Cunfeng,Shen, Tielong,Wang, Zhiguang,et al. Modifications of SiC under high fluence Kr-ion irradiation at different temperatures[C]. 见:.