Spectra study of He-irradiation induced defects in 6H-SiC

doi:10.7498/aps.63.216101

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Spectra study of He-irradiation induced defects in 6H-SiC
	Pang Li-Long 2; Cui Ming-Huan 1,2; Zhang Hong-Peng2 ; Li Yuan-Fei 2; Wang Ji 1,2; Zhu Hui-Ping 1,2; Du Yang-Yang 1,2; Li Bing-Sheng2 ; Wang Dong 1,2; Song Peng 1,2
刊名	ACTA PHYSICA SINICA
	2014-11-05
卷号	63
关键词	6h-sic Helium Bubbles Raman Scattering Spectra Uv-visible Transmittance Spectra
ISSN号	1000-3290
DOI	10.7498/aps.63.216101
文献子类	Article
英文摘要	Specimens of 6H-SiC were irradiated by 300keV He ions at temperatures of RT, 450, 600 and 750 degrees C with fluences ranging from 1 x 10(15) to 1 x 10(17) cm(-2). Post-irradiation, virgin and irradiated 6H-SiC specimens are measured and studied by microscopic laser confocal Raman spectrometer and UV-visible transmission apparatus. Analyses of both experimental results shown that production and recovery of defects caused by irradiation are directly related to the fluences and temperatures. Amorphization of 6H-SiC irradiated at RT occurrs, which is reflected by the disappearance of the Raman peaks and the saturation of the relative Raman intensity(simultaneously a strong Si-Si peak appears). Recovery of defects may exist in high-temperature irradiation, when helium bubbles do not exist, so that irradiation-induced defects can be easily recovered during irradiation process at elevated temperatures; but when helium bubbles are present, they can inhibit defects to recover, as shown in the trend of slopes of curves representing the relative Raman intensity and the relative absorption coefficients. This paper mainly focuses on the effects of helium bubbles on defect accumulation and recovery under the condition of high temperature irradiation, and then the comparison with the results of 6H-SiC irradiated by Si ions at elevated temperatures.
资助项目	National Natural Science Foundation of China[11005130] ; National Natural Science Foundation of China[11105190] ; National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91126011]
WOS关键词	SILICON-CARBIDE ; ANNEALING BEHAVIOR ; OPTICAL-PROPERTIES ; ION-IMPLANTATION ; RAMAN-SPECTROSCOPY ; DAMAGE ; RECRYSTALLIZATION ; AMORPHIZATION ; ENERGY ; TEMPERATURE
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000344616700038
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/49393]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Wang Zhi-Guang
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Pang Li-Long,Cui Ming-Huan,Zhang Hong-Peng,et al. Spectra study of He-irradiation induced defects in 6H-SiC[J]. ACTA PHYSICA SINICA,2014,63.
APA	Pang Li-Long.,Cui Ming-Huan.,Zhang Hong-Peng.,Li Yuan-Fei.,Wang Ji.,...&Zhu Ya-Bin.(2014).Spectra study of He-irradiation induced defects in 6H-SiC.ACTA PHYSICA SINICA,63.
MLA	Pang Li-Long,et al."Spectra study of He-irradiation induced defects in 6H-SiC".ACTA PHYSICA SINICA 63(2014).