Modification of Optical Band-Gap of Si Films After Ion Irradiation

doi:10.1088/1009-0630/14/7/15

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Modification of Optical Band-Gap of Si Films After Ion Irradiation
	Wei Kongfang 2; Sun Jianrong2 ; Gou Jie2 ; Ma Yizhun1,2 ; Shen Tielong 1,2; Pang Lilong 1,2; Sheng Yanbin2 ; Yao Cunfeng1,2 ; Wang Zhiguang2 ; Zhu Yabin 1,2
刊名	PLASMA SCIENCE & TECHNOLOGY
	2012-07-01
卷号	14 页码:632-635
关键词	Ion irradiatIon Silicon Film Optical Band-gap Grain Size
ISSN号	1009-0630
DOI	10.1088/1009-0630/14/7/15
文献子类	Article
英文摘要	Amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated by using chemical vapor deposition (CVD) system. The a-Si and nc-Si thin films were irradiated with 94 MeV Xe-ions at fluences of 1.0 x 10(11) ions/cm(2), 1.0 x 10(12) ions/cm(2) and 1.0 x 10(13) ions/cm(2) at room temperature (RT). The nc-Si:H films were irradiated with 9 MeV Xe-ions at 1.0 x 10(12) Xe/cm(2), 1.0 x 10(13) Xe/cm(2) and 1.0 x 10(14) Xe/cm(2) at RT. For comparison, mono-crystalline silicon (c-Si) samples were also irradiated at RT with 94 MeV Xe-ions. All samples were analyzed by using an UV/VIS/NIR spectrometer and an X-ray powder diffractometer. Variations of the optical band-gap (E-g) and grain size (D) versus the irradiation fluence were investigated systematically. The obtained results showed that the optical band-gaps and grain size of the thin films changed dramatically whereas no observable change was found in c-Si samples after Xe-ion irradiation. Possible mechanism underlying the modification of silicon thin films was briefly discussed.
资助项目	Knowledge Innovation Program of the Chinese Academy of Sciences[KJCX2-YW-N35]
WOS关键词	SILICON SOLAR-CELLS ; NANOCRYSTALLINE SILICON ; THIN-FILMS ; EFFICIENCY ; MULTICRYSTALLINE ; MICROCRYSTALLINE
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000307123300015
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/48857]
专题	近代物理研究所_先进核能材料研究室（ADS）近代物理研究所_能源材料研究组
通讯作者	Wang Zhiguang
作者单位	1.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Wei Kongfang,Sun Jianrong,Gou Jie,et al. Modification of Optical Band-Gap of Si Films After Ion Irradiation[J]. PLASMA SCIENCE & TECHNOLOGY,2012,14:632-635.
APA	Wei Kongfang.,Sun Jianrong.,Gou Jie.,Ma Yizhun.,Shen Tielong.,...&Zhu Yabin.(2012).Modification of Optical Band-Gap of Si Films After Ion Irradiation.PLASMA SCIENCE & TECHNOLOGY,14,632-635.
MLA	Wei Kongfang,et al."Modification of Optical Band-Gap of Si Films After Ion Irradiation".PLASMA SCIENCE & TECHNOLOGY 14(2012):632-635.