Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures

doi:10.1016/j.nimb.2016.11.017

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures
	Zang, Hang 1; Wang, Zhiguang2 ; Yun, Di 1; He, Chaohui 1; Li, Tao 1; Kurtz, Richard J.3; Henager, Charles H., Jr.3; Edwards, Danny J.3; Devaraj, Arun 3; Liu, Wenbo 1
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2016-12-15
卷号	389 页码:40-47
关键词	He and Kr cavities Vacancy effect High-temperature annealing Ion irradiation 3C-SiC
ISSN号	0168-583X
DOI	10.1016/j.nimb.2016.11.017
英文摘要	Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 degrees C with 120 keV He2+ and 4 MeV Kr15+ ions to 10(17) and 4 x 10(16) cm(-2), respectively. The Kr15+ ions penetrated the entire depth region of the He2+ ion implantation. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600 degrees C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He2+ ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr15+ ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600 degrees C. (C) 2016 Elsevier B.V. All rights reserved.
资助项目	China Scholarship Council ; National Natural Science Foundation of China[11405124] ; U.S. DOE Office of Fusion Energy Sciences[DE-AC05-76RL01830]
WOS关键词	CUBIC SILICON-CARBIDE ; HELIUM IMPLANTATION ; AG DIFFUSION ; DEGREES-C ; ION ; EVOLUTION ; BEHAVIOR ; DEFECTS ; ENERGY
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000390745700008
资助机构	China Scholarship Council ; National Natural Science Foundation of China ; U.S. DOE Office of Fusion Energy Sciences
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/44032]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Zang, Hang; Jiang, Weilin
作者单位	1.Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Pacific Northwest Natl Lab, Richland, WA 99352 USA
推荐引用方式 GB/T 7714	Zang, Hang,Wang, Zhiguang,Yun, Di,et al. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2016,389:40-47.
APA	Zang, Hang.,Wang, Zhiguang.,Yun, Di.,He, Chaohui.,Li, Tao.,...&Jiang, Weilin.(2016).Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,389,40-47.
MLA	Zang, Hang,et al."Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 389(2016):40-47.