Structural damage in InGaN induced by MeV heavy ion irradiation

doi:10.1016/j.nimb.2015.04.065

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Structural damage in InGaN induced by MeV heavy ion irradiation
	Zhang, L. M.1; Zhang, C. H.3; Wang, T. S.1; Zhao, J. T.1; Hu, P.1; Fadanelli, R. C.2
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2015-08-01
卷号	356 期号:356 页码:53-56
关键词	InGaN Ion irradiation Structural damage
ISSN号	0168-583X
DOI	10.1016/j.nimb.2015.04.065
英文摘要	In0.18Ga0.82N films were irradiated with 4 MeV Kr-84 and 8.9 MeV Bi-209 ions to various fluences at room temperature. The irradiated films were analyzed by means of Rutherford backscattering/channeling (RBS/C) and high resolution X-ray diffraction (HRXRD). The RBS/C measurements show that under the irradiation conditions, the relative lattice disorder in the films, obtained from the normalized backscattering yield, exhibits a rapid increase in the range from similar to 2% to 68%. There is also an increasing lattice expansion of the films with increasing ion fluence, as determined by the HRXRD measurements. At a comparable level of lattice disorder, the Kr irradiation leads to a more pronounced lattice expansion than the Bi irradiation. This may be attributed to a larger portion of the single interstitials in the films produced by the lighter Kr ion irradiation. (C) 2015 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[11305081] ; China Scholarship Council
WOS关键词	GAN ; IMPLANTATION ; AMORPHIZATION ; BOMBARDMENT ; NITRIDES
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000356990400009
资助机构	National Natural Science Foundation of China ; China Scholarship Council
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/14975]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Zhang, L. M.
作者单位	1.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China 2.Univ Fed Rio Grande do Sul, Inst Fis, BR-91500 Porto Alegre, RS, Brazil 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhang, L. M.,Zhang, C. H.,Wang, T. S.,et al. Structural damage in InGaN induced by MeV heavy ion irradiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2015,356(356):53-56.
APA	Zhang, L. M.,Zhang, C. H.,Wang, T. S.,Zhao, J. T.,Hu, P.,&Fadanelli, R. C..(2015).Structural damage in InGaN induced by MeV heavy ion irradiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,356(356),53-56.
MLA	Zhang, L. M.,et al."Structural damage in InGaN induced by MeV heavy ion irradiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 356.356(2015):53-56.