Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC

doi:10.1016/j.jnucmat.2014.05.028

	Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC
	Wei, KF; Wang, J; Song, P; Pang, LL; Zhu, YB; Du, YY; Zhu, HP; Li, YF; Cui, MH; Sun, JR
刊名	JOURNAL OF NUCLEAR MATERIALS
	2014
卷号	455 期号:1-3 页码:116-121
ISSN号	0022-3115
DOI	10.1016/j.jnucmat.2014.05.028
英文摘要	The effects of annealing temperature on strain and mechanical property changes of 6H-SiC implanted with helium ions at 600 K to doses of 3 x 10(15) cm(-2), 1 x 10(16) cm(-2) and 3 x 10(16) cm(-2) and at an ion energy of 100 keV were investigated by using high-resolution X-ray diffraction (XRD), nano-indentation and transmission electron microscopy (TEM). Strain increases with increasing displacements per atom (dpa). Strain relaxation in terms Of changes in Delta d/d exhibited a linear decrease with increasing annealing temperature ranging from 873 K to 1473 K for 30 min in vacuum. The relaxation activation energies of the strains were estimated by Arrhenius law to be in the range of 0.4-0.7 eV. Irradiation-induced hardening was observed via nano-indentation measurements as a function of annealing. The hardness of the highly damaged layer decreased monotonically with increasing annealing temperature for the samples implanted with He ions to doses of 3 x 10(15) cm(-2) and 1 x 10(16) cm(-2), and where no helium bubbles were formed in the damaged layer. The hardness of the damaged layer initially decreased and then increased with increasing annealing temperature from 600 K to 1073 K for the sample implanted He ions to a dose of 3 x 10(16) cm(-2), where numerous helium bubbles were formed in the damaged layer. The TEM results suggest that the growth of helium bubbles emits interstitials upon annealing. These interstitials agglomerate into stacking faults and dislocation loops, which increase the hardness. (C) 2014 Elsevier B.V. All rights reserved.
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资助项目	National Basic Research Program of China (973 program)[2010 CB832904]
WOS关键词	HELIUM IMPLANTATION ; TEMPERATURE ; DAMAGE ; INDENTATION ; ACTIVATION ; CARBON ; IONS
WOS研究方向	Materials Science ; Nuclear Science & Technology
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000348003600024
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/14980]
专题	近代物理研究所_能源材料研究组近代物理研究所_材料研究中心近代物理研究所_先进核能材料研究室（ADS）
作者单位	中国科学院近代物理研究所
推荐引用方式 GB/T 7714	Wei, KF,Wang, J,Song, P,et al. Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC[J]. JOURNAL OF NUCLEAR MATERIALS,2014,455(1-3):116-121.
APA	Wei, KF.,Wang, J.,Song, P.,Pang, LL.,Zhu, YB.,...&Yao, CF.(2014).Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC.JOURNAL OF NUCLEAR MATERIALS,455(1-3),116-121.
MLA	Wei, KF,et al."Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC".JOURNAL OF NUCLEAR MATERIALS 455.1-3(2014):116-121.