Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy

doi:10.1016/j.micron.2016.06.003

	Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy
	Xi, Shouzhi 3,4; Guo, Na 2; Jie, Wanqi 3,4; Du, Guanghua1 ; Shen, Hao 2; Lv, Haoyan 2; Xu, Yadong 3,4; Xu, Lingyan 3,4; Rong, Caicai 2; Gu, Yaxu 3,4
刊名	MICRON
	2016-09-01
卷号	88 页码:54-59
关键词	Proton Radiation damage Ion beam induced charge microscopy CdZnTe Bias dependent
ISSN号	0968-4328
DOI	10.1016/j.micron.2016.06.003
英文摘要	The influence of damage induced by 2 MeV protons on CdZnTe radiation detectors is investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency (CCE) in irradiated region is found to be degraded above a fluence of 3.3 x 10(11) p/cm(2) and the energy spectrum is severely deteriorated with increasing fluence. Moreover, CCE maps obtained under the applied biases from 50 V to 400 V suggests that local radiation damage results in significant degradation of CCE uniformity, especially under low bias, i. e., 50 V and 100 V. The CCE nonuniformity induced by local radiation damage, however, can be greatly improved by increasing the detector applied bias. This bias-dependent effect of 2 MeV proton induced radiation damage in CdZnTe detectors is attributed to the interaction of electron cloud and radiation-induced displacement defects. (C) 2016 Elsevier Ltd. All rights reserved.
资助项目	National Natural Science Foundations of China[51202197] ; National Natural Science Foundations of China[51372205] ; 111 Project of China[B08040] ; Natural Science Basic Research Plan in Shaanxi Province of China[2016KJXX-09]
WOS关键词	NUCLEAR MICROPROBE ; CDTE DETECTORS ; SEMICONDUCTOR-DETECTORS ; TRANSPORT ; IRRADIATION ; COLLECTION ; CRYSTALS ; TESTS ; IBICC
WOS研究方向	Microscopy
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000381531200008
资助机构	National Natural Science Foundations of China ; 111 Project of China ; Natural Science Basic Research Plan in Shaanxi Province of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/43406]
专题	近代物理研究所_实验物理中心
通讯作者	Guo, Na; Jie, Wanqi
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Mat Res Ctr, Lanzhou 730000, Peoples R China 2.Fudan Univ, Inst Modern Phys, Appl Ion Beam Phys Lab, Shanghai 200433, Peoples R China 3.Northwestern Polytech Univ, Minist Ind & Informat Technol, Key Lab Radiat Detect Mat & Devices, Xian 710072, Peoples R China 4.Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
推荐引用方式 GB/T 7714	Xi, Shouzhi,Guo, Na,Jie, Wanqi,et al. Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy[J]. MICRON,2016,88:54-59.
APA	Xi, Shouzhi.,Guo, Na.,Jie, Wanqi.,Du, Guanghua.,Shen, Hao.,...&Wang, Tao.(2016).Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy.MICRON,88,54-59.
MLA	Xi, Shouzhi,et al."Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy".MICRON 88(2016):54-59.