Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

doi:10.1016/j.nimb.2005.11.134

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	Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation
	Song, Y; Zhang, CH; Wang, ZG; Sun, YM; Duan, JL; Zhao, ZM
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2006-04-01
卷号	245 期号:1 页码:210-213
关键词	ion implantation heavy ion irradiation Al2O3 PL spectra
ISSN号	0168-583X
DOI	10.1016/j.nimb.2005.11.134
英文摘要	In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed. (c) 2005 Elsevier B.V. All rights reserved.
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000236288500044
公开日期	2010-10-29
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/6247]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）近代物理研究所_材料研究中心近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Song, Y
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Song, Y,Zhang, CH,Wang, ZG,et al. Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2006,245(1):210-213.
APA	Song, Y,Zhang, CH,Wang, ZG,Sun, YM,Duan, JL,&Zhao, ZM.(2006).Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,245(1),210-213.
MLA	Song, Y,et al."Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 245.1(2006):210-213.