Damage and recovery behavior of 4H-SiC implanted with He ions

doi:10.1016/j.nimb.2019.04.055

	Damage and recovery behavior of 4H-SiC implanted with He ions
	Zhang, Chonghong1 ; Yang, Yitao1 ; Su, Changhao 1,2; Ding, Zhaonan1 ; Song, Yin1
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2019-06-15
卷号	449 页码:54-57
关键词	4H-SiC He ions implantation Nanoindentation Raman Graphite Thermal annealing
ISSN号	0168-583X
DOI	10.1016/j.nimb.2019.04.055
通讯作者	Yang, Yitao(yangyt@impcas.ac.cn)
英文摘要	Multiple-energy He ions were used to produce thicker damage layers with 3000 appm/0.17 dpa (by low dose implantation) and 6000 appm/0.34 dpa (by high dose implantation), respectively, in mono-crystalline 4H-SiC at room temperature (RT). Results from XRD and nano-indentation tests indicated that the low dose implanted sample contained larger numbers of defects, but still sustained crystalline state. However, amorphization occurred in the sample with high implantation dose. Subsequently, both implanted samples were annealed in vacuum condition at 300, 500, 700, 900 and 1100 degrees C for 0.5 h, successively. After each step of annealing, the samples were characterized by Raman spectroscopy. Raman spectra indicated that graphite was formed in the implanted samples. From RT to 500 degrees C, the concentration of graphite in both implanted samples increased with temperature, which was considered to be related with the release of He atoms from the Si tetrahedral interstitial sites. However, the graphite showed different annealing behavior for the low dose and high dose implanted samples at the temperature from 500 to 1100 degrees C. For the sample with low implantation dose, the graphite concentration decreased with increase of temperature, which was due to the decomposition of the distorted graphite. However, for the sample with high implantation dose, the graphite completely vanished after annealing at 700 degrees C, which could be caused by the occurrence of recrystallization in SiC.
资助项目	National Natural Science Foundation of China (NSFC)[11475230] ; National Natural Science Foundation of China (NSFC)[91426304]
WOS关键词	HELIUM IMPLANTATION ; RAMAN-SCATTERING ; DOSE DEPENDENCE ; 6H-SIC CRYSTAL ; EVOLUTION ; IRRADIATION ; DEFECTS ; PROMISE
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000471081600010
资助机构	National Natural Science Foundation of China (NSFC)
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/133131]
专题	中国科学院近代物理研究所
通讯作者	Yang, Yitao
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Chonghong,Yang, Yitao,Su, Changhao,et al. Damage and recovery behavior of 4H-SiC implanted with He ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,449:54-57.
APA	Zhang, Chonghong,Yang, Yitao,Su, Changhao,Ding, Zhaonan,&Song, Yin.(2019).Damage and recovery behavior of 4H-SiC implanted with He ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,449,54-57.
MLA	Zhang, Chonghong,et al."Damage and recovery behavior of 4H-SiC implanted with He ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 449(2019):54-57.