Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C | |
Li, Bingsheng2; Liu, Yuzhu1; Liu, Huiping3; Kang, Long3; Xiong, Anli2 | |
刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS |
2019-09-01 | |
卷号 | 454页码:45-49 |
关键词 | GaN He ion implantation Microstructure Extended defects |
ISSN号 | 0168-583X |
DOI | 10.1016/j.nimb.2019.06.009 |
通讯作者 | Li, Bingsheng(libingshengmvp@163.com) |
英文摘要 | Microstructure of extended defects in He-implanted GaN upon thermal annealing at temperature of 450 degrees C is studied. Before and after annealing, the samples are examined via cross-sectional transmission electron microscopy (XTEM) analysis. After annealing, extended defects, such as dislocation loops, stacking faults, tangled dislocations, and He bubbles are visible. Some extended defects diffuse toward the sample surface. Atomic structures of observed extended defects are investigated by high-resolution transmission electron microscopy (HRTEM). The research results are good for understanding the irradiation damage in GaN. |
资助项目 | National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11475229] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141] |
WOS关键词 | ATOMIC CONFIGURATIONS ; FRACTURE ; HELIUM ; MODEL ; IONS |
WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000474316800007 |
资助机构 | National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology |
内容类型 | 期刊论文 |
源URL | [http://119.78.100.186/handle/113462/133073] |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Li, Bingsheng |
作者单位 | 1.Nanjing Univ Informat Sci & Technol, Jiansu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China 2.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Bingsheng,Liu, Yuzhu,Liu, Huiping,et al. Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,454:45-49. |
APA | Li, Bingsheng,Liu, Yuzhu,Liu, Huiping,Kang, Long,&Xiong, Anli.(2019).Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,454,45-49. |
MLA | Li, Bingsheng,et al."Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 454(2019):45-49. |
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