CORC  > 近代物理研究所  > 中国科学院近代物理研究所
Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface
Xu, Q. M.1,2; Yang, Z. H.1; Guo, Y. P.3; Chen, Y. H.1; Zhou, X. M.1; Liu, H. P.1; Zhao, H. Y.1
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
2018-12
卷号436页码:74-77
关键词Highly charged ion Ga II line Photon yield Potential energy
ISSN号0168-583X
DOI10.1016/j.nimb.2018.04.015
英文摘要This paper reports the measurement of visible light emission in the collisions of slow (V similar to 0.38 V-Bohr) highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface. The experimental results include Ga I lines from the 4d D-2(3/2) and 5s S-2(1/2) to the 4p P-2(1/2,3/2) states and Ga II lines belonged to the electron transitions 4p(2) D-1(2)-> 4s4p 1P(1), 4s5s S-1(0) -> 4s4p P-1(1) and 4s4f F-1(3) -> 4s4d D-3(3). The measurement on the projectile charge state dependences of Ga II at 270.20, 277.90, 426.20 nm and Ga I at 287.65, 294.55, 403.55, 417.35 nm lines is presented. It is concluded that the photon yields increase with charge state in the same way as the potential energy increases and the potential energy is the driving force for optical emission of excited Ga atoms and Ga+ ions.
资助项目National Natural Science Foundation of China[U1732269]
WOS关键词INDUCED PHOTON-EMISSION ; ATOMIC EXCITATIONS ; LIGHT-EMISSION ; SLOW ; BOMBARDMENT ; PARTICLES ; OXYGEN ; TARGET ; YIELD
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000452585400012
内容类型期刊论文
源URL[http://119.78.100.186/handle/113462/64459]  
专题中国科学院近代物理研究所
通讯作者Yang, Z. H.
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Nanjing Univ Aeronaut & Astronaut, Coll Astronaut, Nanjing 210016, Jiangsu, Peoples R China
推荐引用方式
GB/T 7714
Xu, Q. M.,Yang, Z. H.,Guo, Y. P.,et al. Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2018,436:74-77.
APA Xu, Q. M..,Yang, Z. H..,Guo, Y. P..,Chen, Y. H..,Zhou, X. M..,...&Zhao, H. Y..(2018).Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,436,74-77.
MLA Xu, Q. M.,et al."Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 436(2018):74-77.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace