Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface | |
Xu, Q. M.1,2; Yang, Z. H.1; Guo, Y. P.3; Chen, Y. H.1; Zhou, X. M.1; Liu, H. P.1; Zhao, H. Y.1 | |
刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS |
2018-12 | |
卷号 | 436页码:74-77 |
关键词 | Highly charged ion Ga II line Photon yield Potential energy |
ISSN号 | 0168-583X |
DOI | 10.1016/j.nimb.2018.04.015 |
英文摘要 | This paper reports the measurement of visible light emission in the collisions of slow (V similar to 0.38 V-Bohr) highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface. The experimental results include Ga I lines from the 4d D-2(3/2) and 5s S-2(1/2) to the 4p P-2(1/2,3/2) states and Ga II lines belonged to the electron transitions 4p(2) D-1(2)-> 4s4p 1P(1), 4s5s S-1(0) -> 4s4p P-1(1) and 4s4f F-1(3) -> 4s4d D-3(3). The measurement on the projectile charge state dependences of Ga II at 270.20, 277.90, 426.20 nm and Ga I at 287.65, 294.55, 403.55, 417.35 nm lines is presented. It is concluded that the photon yields increase with charge state in the same way as the potential energy increases and the potential energy is the driving force for optical emission of excited Ga atoms and Ga+ ions. |
资助项目 | National Natural Science Foundation of China[U1732269] |
WOS关键词 | INDUCED PHOTON-EMISSION ; ATOMIC EXCITATIONS ; LIGHT-EMISSION ; SLOW ; BOMBARDMENT ; PARTICLES ; OXYGEN ; TARGET ; YIELD |
WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000452585400012 |
内容类型 | 期刊论文 |
源URL | [http://119.78.100.186/handle/113462/64459] |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Yang, Z. H. |
作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Nanjing Univ Aeronaut & Astronaut, Coll Astronaut, Nanjing 210016, Jiangsu, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, Q. M.,Yang, Z. H.,Guo, Y. P.,et al. Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2018,436:74-77. |
APA | Xu, Q. M..,Yang, Z. H..,Guo, Y. P..,Chen, Y. H..,Zhou, X. M..,...&Zhao, H. Y..(2018).Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,436,74-77. |
MLA | Xu, Q. M.,et al."Optical emission from the interaction of highly charged Xeq+ (6 <= q <= 23) ions with GaAs surface".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 436(2018):74-77. |
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