Microstructure of Hydrogen-Implanted Polycrystalline alpha-SiC after Annealing

doi:10.1088/0256-307X/35/9/096103

	Microstructure of Hydrogen-Implanted Polycrystalline alpha-SiC after Annealing
	Liu, Hui-Ping; Li, Jin-Yu; Li, Bing-Sheng
刊名	CHINESE PHYSICS LETTERS
	2018-09
卷号	35
ISSN号	0256-307X
DOI	10.1088/0256-307X/35/9/096103
英文摘要	Microstructural evolution in H-implanted polycrystalline alpha-SiC upon thermal annealing at temperature 1100 degrees C is studied. After annealing, the samples are examined via cross-sectional transmission electron microscopy (XTEM) analysis. H-2 gas bubbles are formed during H implantation and some H-2 molecules are released from the bubble to form cavities during thermal annealing. The distribution and size of the observed cavities are related to the implantation fluence. The results are compared to H implanted single crystal SiC and He implanted polycrystalline alpha-SiC. The possible reasons are discussed.
资助项目	National Natural Science Foundation of China[11475229]
WOS关键词	ION ; IRRADIATION
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000448134000012
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/64413]
专题	中国科学院近代物理研究所
通讯作者	Li, Jin-Yu; Li, Bing-Sheng
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Liu, Hui-Ping,Li, Jin-Yu,Li, Bing-Sheng. Microstructure of Hydrogen-Implanted Polycrystalline alpha-SiC after Annealing[J]. CHINESE PHYSICS LETTERS,2018,35.
APA	Liu, Hui-Ping,Li, Jin-Yu,&Li, Bing-Sheng.(2018).Microstructure of Hydrogen-Implanted Polycrystalline alpha-SiC after Annealing.CHINESE PHYSICS LETTERS,35.
MLA	Liu, Hui-Ping,et al."Microstructure of Hydrogen-Implanted Polycrystalline alpha-SiC after Annealing".CHINESE PHYSICS LETTERS 35(2018).