Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space

	Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space
	Zhang, Zhangang 1; Lei, Zhifeng 1; En, Yunfei 1; Liu, Jie2 ; IEEE
	2016
关键词	single event upset static random access memory Monte-Carlo secondary electron nuclear reaction
英文摘要	Single-event performance of 65 nm CMOS SRAM technology was revealed by Monte-Carlo methods, with heavy ions energy ranging from 20 MeV/n to 2 GeV/n. By comparing the energy-deposition spectrums in sensitive volumes (SV) and single event upset (SEU) cross sections, it was found that secondary electrons and nuclear reactions of the 200 MeV/n incident ions have significant impact on the device response. Secondary electrons excited by the energetic space ions can spread beyond the SV of the 65 nm bulk CMOS SRAM and result into partial collection of the ion track. This mechanism causes the constant increase of SEU cross section with ion LET, even deviating from the surface area of the SV by 3.3x. Nuclear reaction can lead to unexpectedly large energy-deposition events in the SV by 10x than the initial LET, which create SEU cross sections in the sub-LETth region, although with lower probability than direct-ionization process by 10(4)x similar to 10(5)x. Higher ion energy seems to enhance the influence of secondary electrons and nuclear reaction. Moreover, soft error rates of the 65 nm bulk CMOS SRAM technology on GEO were predicted and discussed.
会议录	2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)
会议录出版者	IEEE
会议录出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
语种	英语
资助项目	National Natural Science Foundation of China[11505033]
WOS研究方向	Engineering
WOS记录号	WOS:000450759400082
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/63972]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Zhangang
作者单位	1.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Zhangang,Lei, Zhifeng,En, Yunfei,et al. Monte-Carlo prediction of single-event characteristics of 65 nm CMOS SRAM under hundreds of MeV/n heavy-ions in space[C]. 见:.