Large magnetoresistance effect in nitrogen-doped silicon

doi:10.1063/1.4972795

	Large magnetoresistance effect in nitrogen-doped silicon
	Wang, Tao 1; Yang, Zhaolong 1; Wang, Wei 1; Si, Mingsu 1; Yang, Dezheng 2; Liu, Huiping2 ; Xue, Desheng 1
	2017-05
卷号	7
期号	5
DOI	10.1063/1.4972795
英文摘要	In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f) of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications. (C) 2016 Author(s).
会议录	AIP ADVANCES
会议录出版者	AMER INST PHYSICS
会议录出版地	1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
语种	英语
资助项目	FRFCU[lzujbky-2014-42] ; FRFCU[lzujbky-2015-204]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS记录号	WOS:000402797100325
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58222]
专题	中国科学院近代物理研究所
通讯作者	Yang, Dezheng
作者单位	1.Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou, Peoples R China
推荐引用方式 GB/T 7714	Wang, Tao,Yang, Zhaolong,Wang, Wei,et al. Large magnetoresistance effect in nitrogen-doped silicon[C]. 见:.