Swift heavy ion irradiation induced luminescence from C-doped SiO2 films

	Swift heavy ion irradiation induced luminescence from C-doped SiO2 films
	Wang, ZG ; Jin, YF ; Xie, EQ ; Zhu, ZY ; Hou, MD ; Chen, XX ; Sun, YM ; Zhang, QX
	2002-06
关键词	photoluminescence swift heavy ion irradiation SiO2 films electronic energy loss light-emitting materials
卷号	193
页码	685-689
英文摘要	In the present work, a novel technique, "low energy ion implantation + high-energy heavy ion irradiation", was used to synthesis light-emitting material. Experimentally, thermal-grown SiO2 films were firstly implanted with 120 keV C+ ions at room temperature (RT) to total doses in the range of (5.0 x 10(16)-1.0 x 10(18)) ionS/cm(2). These C-doped SiO2 films were then irradiated at RT with 335 and 855 MeV Ar-40 or 1.98 GeV Kr-84 ions to a fluence of 1.0 x 10(12) ionS/cm(2), or with 1.75 GeV Xe-136 ions to 1 x 10(11), 5 x 10(11) or 1 x 10(12) ionS/cm(2), respectively. By measuring photoluminescence (PL) spectra of these samples excited by 320 nm light, the PL bands were investigated as functions of implantation ion dose, irradiation ion fluence and electronic energy loss S,. It was found that this technique is a useful tool to produce high quality light-emission structures, and that high-energy heavy ion irradiated C-doped SiO2 films should be an efficient blue-violet emitting material. Furthermore, S, plays a dominant role in the formation of the PL bands, and proper C-dopant and suitable irradiation fluence will enhance the PL efficiency. Possible origins of the blue-violet PL bands formed in the ion irradiated C-doped SiO2 films were discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000177055500111
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58020]
专题	中国科学院近代物理研究所
通讯作者	Wang, ZG
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Dept Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Wang, ZG,Jin, YF,Xie, EQ,et al. Swift heavy ion irradiation induced luminescence from C-doped SiO2 films[C]. 见:.