Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions

doi:10.1016/j.nimb.2012.12.083

	Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions
	Cui, M. H.1,2; Wang, Z. G.1; Pang, L. L.1; Shen, T. L.1,2; Yao, C. F.1; Li, B. S.1; Li, J. Y.1; Cao, X. Z.3; Zhang, P.3; Sun, J. R.1
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2013-07-15
卷号	307 页码:507-511
关键词	Positron Annihilation Spectroscopy Nano-indentation He-ions Implantation
ISSN号	0168-583X
DOI	10.1016/j.nimb.2012.12.083
文献子类	Article
英文摘要	Tungsten has been selected as one of the potential candidate materials to cover some parts of the divertor in the future International Thermonuclear Experimental Reactor (ITER). The accumulation of defects and He induced by neutron irradiation and their impact on the mechanical properties of tungsten are of very importance. In this work, the high pure polycrystalline tungsten samples were implanted by 200 keV He+ with a fluence of 5 x 10(16) He+/cm(2) at temperatures of room temperature (RT), 200, 400 and 800 degrees C. Vacancy-type defects were detected in all implanted samples by means of positron annihilation spectroscopy. Vacancy-type defects produced by He implantation exist in the damaged layer and are decorated by He atoms. At higher implantation temperature, He-V complexes could grow larger through absorbing mobile vacancies. The nano-hardness values were measured by nano-indentation technique. It is observed that implantation hardening occurred for all the implanted samples. With increasing implantation temperature from 200 degrees C to 800 degrees C, the change of the average hardness values which are lower than the value at RT has a tendency of enhancement for the shallower layer and degradation for the deeper layer. The hardness variations are discussed to be the pinning effects of the defects with different density or size. Published by Elsevier B.V.
WOS关键词	IRRADIATION-INDUCED DEFECTS ; PLASMA-FACING MATERIALS ; POSITRON-ANNIHILATION ; LOW-ENERGY ; HELIUM RETENTION ; IMPLANTED TUNGSTEN ; METALS ; BEHAVIOR ; MICROSTRUCTURE ; DESORPTION
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000321722200113
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/48191]
专题	中国科学院近代物理研究所
通讯作者	Wang, Z. G.
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Cui, M. H.,Wang, Z. G.,Pang, L. L.,et al. Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,307:507-511.
APA	Cui, M. H..,Wang, Z. G..,Pang, L. L..,Shen, T. L..,Yao, C. F..,...&Sheng, Y. B..(2013).Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,307,507-511.
MLA	Cui, M. H.,et al."Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307(2013):507-511.