Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films

doi:10.1016/j.matlet.2015.08.143

	Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films
	Nie, Xinran 1,2; Zhang, Bin 1,2; Wang, Jianzhong 1,2; Shi, Liqun 1,2; Di, Zengfeng 3; Guo, Qinglei 3
刊名	MATERIALS LETTERS
	2015-12-15
卷号	161 页码:355-359
关键词	P-type ZnO:N film Room-temperature ferromagnetism V-O defects BMPs
ISSN号	0167-577X
DOI	10.1016/j.matlet.2015.08.143
英文摘要	Ferromagnetism in p-type N-doped ZnO films, deposited on (0001) sapphire substrates by radio frequency (rf) reactive magnetron sputtering at different N-2/O-2 ratios, has been observed at room temperature. Both the p-type conduction and ferromagnetism are originated from the substitution of O with N. At the N-2/O-2 ratio of 15:15, the film displays the maximum hole density and the minimum resistivity as well as the maximum Ms. The transition from n-type to p-type strongly depends on both the substitutional nitrogen on the oxygen site (N-O) and oxygen vacancy (V-O) concentrations. The observed ferromagnetism of p-type ZnO:N films is intrinsic and strongly related to both the N-O and V-O content and can be interpreted by the bound magnetic polarons (BMPs) model. (C) 2015 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[10775033] ; National Natural Science Foundation of China[11075038]
WOS关键词	THERMAL-OXIDATION ; THIN-FILMS ; EPITAXY
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000364891700092
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/41006]
专题	中国科学院近代物理研究所
通讯作者	Zhang, Bin
作者单位	1.Fudan Univ, Inst Modern Phys, Key Lab, Appl Ion Beam Phys Lab,Minist Educ, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Nucl Sci & Technol, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Nie, Xinran,Zhang, Bin,Wang, Jianzhong,et al. Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films[J]. MATERIALS LETTERS,2015,161:355-359.
APA	Nie, Xinran,Zhang, Bin,Wang, Jianzhong,Shi, Liqun,Di, Zengfeng,&Guo, Qinglei.(2015).Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films.MATERIALS LETTERS,161,355-359.
MLA	Nie, Xinran,et al."Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films".MATERIALS LETTERS 161(2015):355-359.