Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

doi:10.1016/j.tsf.2015.07.039

	Study of surface blistering in GaN by hydrogen implantation at elevated temperatures
	Li, B. S.; Wang, Z. G.; Zhang, H. P.
刊名	THIN SOLID FILMS
	2015-09-01
卷号	590 页码:64-70
关键词	Implantation Cross-sectional transmission electron microscopy Dislocation loops Blisters Exfoliation
ISSN号	0040-6090
DOI	10.1016/j.tsf.2015.07.039
英文摘要	We have investigated mechanisms of ion-cut in H-2(+)-implanted GaN by analyzing microstructural features of H-2(+)-implanted GaN at room temperature, 573 K and 723 K. Using optical microscopy and transmission electron microscopy, it was found that the in-plane compressive stress induced by the H-implantation was necessary for H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient in-plane compressive stress to induce surface blistering. (C) 2015 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[11005130] ; National Natural Science Foundation of China[11475229] ; West Light Foundation of the Chinese Academy of Sciences
WOS关键词	SILICON ; LAYER ; EXFOLIATION ; GROWTH ; SI
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000361057100011
资助机构	National Natural Science Foundation of China ; West Light Foundation of the Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/40679]
专题	中国科学院近代物理研究所
通讯作者	Li, B. S.
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Li, B. S.,Wang, Z. G.,Zhang, H. P.. Study of surface blistering in GaN by hydrogen implantation at elevated temperatures[J]. THIN SOLID FILMS,2015,590:64-70.
APA	Li, B. S.,Wang, Z. G.,&Zhang, H. P..(2015).Study of surface blistering in GaN by hydrogen implantation at elevated temperatures.THIN SOLID FILMS,590,64-70.
MLA	Li, B. S.,et al."Study of surface blistering in GaN by hydrogen implantation at elevated temperatures".THIN SOLID FILMS 590(2015):64-70.