Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films

doi:10.1016/j.ssc.2008.09.014

	Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films
	Zhang, Y. J.1,2; Wang, J. B.1,2; Zhong, X. L.1,2; Zhou, Y. C.1,2; Yuan, X. L.3; Sekiguchi, T.3
刊名	SOLID STATE COMMUNICATIONS
	2008-12-01
卷号	148 页码:448-451
关键词	ZnO thin films Sol-gel Optical properties Ferroelectric properties
ISSN号	0038-1098
DOI	10.1016/j.ssc.2008.09.014
英文摘要	Zn1-xLixO thin films (0.005 <= x <= 0.12) were prepared on Pt/Ti/SiO2/Si substrates via a sol-gel spin coating method. Cathodoluminescence (CL) studies showed that the luminescent efficiency of specimens is degraded sharply with the increment of Li concentration, which indicates that non-radiative centers are introduced during the doping process. From low temperature CL studies, two luminescent peaks centered at 3.28 and 3.31 eV increase gradually with the increment of Li concentration, which are assigned to acceptor bound exciton transitions related to Li-Zn and Li-Zn-Li-i complex, respectively. Ferroelectricity in Zn1-xLixO (0.08 <= x <= 0.12) thin films was found from the polarization hysteresis loop. The remnant polarization increases from 0.12 to 0.23 mu C/cm(2) as the x increases from 0.08 to 0.12. Li-Zn and Li-Zn-Li-i complex play important roles in the ferroelectric appearance of Li-doped ZnO thin films. (C) 2008 Elsevier Ltd. All rights reserved.
资助项目	National Natural Science Foundation of China[50702048] ; National Natural Science Foundation of China[10802072] ; National Natural Science Foundation of China[10732100] ; National Natural Science Foundation of China[10525211] ; National Natural Science Foundation of China[10672139] ; Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China[706044] ; Doctoral Program of Higher Education[20070530010]
WOS关键词	LOW-TEMPERATURE ; EMISSION
WOS研究方向	Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000261406000023
资助机构	National Natural Science Foundation of China ; Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China ; Doctoral Program of Higher Education
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/29723]
专题	中国科学院近代物理研究所
通讯作者	Wang, J. B.
作者单位	1.Xiangtan Univ, Inst Modern Phys, Xiangtan 411105, Hunan, Peoples R China 2.Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China 3.Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
推荐引用方式 GB/T 7714	Zhang, Y. J.,Wang, J. B.,Zhong, X. L.,et al. Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films[J]. SOLID STATE COMMUNICATIONS,2008,148:448-451.
APA	Zhang, Y. J.,Wang, J. B.,Zhong, X. L.,Zhou, Y. C.,Yuan, X. L.,&Sekiguchi, T..(2008).Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films.SOLID STATE COMMUNICATIONS,148,448-451.
MLA	Zhang, Y. J.,et al."Influence of Li-dopants on the luminescent and ferroelectric properties of ZnO thin films".SOLID STATE COMMUNICATIONS 148(2008):448-451.