Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films

doi:10.1016/j.jcrysgro.2008.07.082

	Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films
	Zhong, X. L.1,2; Hu, Z. S.1,2; Li, B.1,2; Wang, J. B.1,2; Liao, H.1,2; Zhou, Y. C.1,2
刊名	JOURNAL OF CRYSTAL GROWTH
	2008-10-15
卷号	310 页码:4516-4520
关键词	Cosubstitution Chemical solution deposition Electrical properties Ferroelectric thin films
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2008.07.082
英文摘要	Nd3+/V5+-cosubstituted Bi4Ti3O12 (Bi3.15Nd0.85Ti2.97V0.03O12, BNTV) thin films are prepared on Pt/Ti/SiO2/Si(100) substrates by a chemical solution deposition (CSD) technique. The structure and surface morphology of the films are analyzed using X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy, respectively. The electrical properties of BNTV films are investigated as a function of annealing temperatures. The remanent polarization, dielectric constant and capacitance of the BNTV thin films increase with the increase of annealing temperatures in the range of 650-750 degrees C. After annealing at 750 degrees C, the BNTV film exhibits good polarization fatigue characteristics at least up to 1 x 10(10) switching cycles at a frequency of 100 kHz and excellent retention properties up to 1 X 10(5) S. (c) 2008 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[10802072] ; National Natural Science Foundation of China[10525211] ; National Natural Science Foundation of China[50702048] ; National Natural Science Foundation of China[50772093] ; National Natural Science Foundation of China[10732100] ; Cultivation Fund of the Key Scientific and Technical Innovation Project ; Ministry of Education of China[706044] ; Specialized Research Fund for the Doctoral Program of Higher Education[20070530010] ; Xiangtan University ; Ministry of Education, China[KF0612]
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; FERROELECTRIC PROPERTIES ; POLARIZATION ; DEPENDENCE
WOS研究方向	Crystallography ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000260988600006
资助机构	National Natural Science Foundation of China ; Cultivation Fund of the Key Scientific and Technical Innovation Project ; Ministry of Education of China ; Specialized Research Fund for the Doctoral Program of Higher Education ; Xiangtan University ; Ministry of Education, China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/28774]
专题	中国科学院近代物理研究所
通讯作者	Zhong, X. L.
作者单位	1.Xiangtan Univ, Inst Modern Phys, Xiangtan 411105, Hunan, Peoples R China 2.Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Zhong, X. L.,Hu, Z. S.,Li, B.,et al. Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films[J]. JOURNAL OF CRYSTAL GROWTH,2008,310:4516-4520.
APA	Zhong, X. L.,Hu, Z. S.,Li, B.,Wang, J. B.,Liao, H.,&Zhou, Y. C..(2008).Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films.JOURNAL OF CRYSTAL GROWTH,310,4516-4520.
MLA	Zhong, X. L.,et al."Microstructures and electrical properties of Nd3+/V5+-cosubstituted Bi4Ti3O12 thin films".JOURNAL OF CRYSTAL GROWTH 310(2008):4516-4520.